| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN014-60LS,115 | NXP Semiconductors | MOSFET N-CH 60V QFN3333 | 252 | 1:$1.00000 10:$0.88600 25:$0.80000 100:$0.70010 250:$0.61392 500:$0.54448 |
| PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 300 | 1:$1.66000 10:$1.46800 25:$1.32560 100:$1.16000 250:$1.01728 |
| BUK7607-30B,118 | NXP Semiconductors | MOSFET N-CH 30V 75A D2PAK | 0 | 800:$0.81306 1,600:$0.73470 2,400:$0.68572 5,600:$0.65143 20,000:$0.62694 40,000:$0.60735 80,000:$0.58776 |
| PSMN014-60LS,115 | NXP Semiconductors | MOSFET N-CH 60V QFN3333 | 0 | 1,400:$0.41670 2,800:$0.38892 7,000:$0.36947 9,800:$0.35558 35,000:$0.34447 70,000:$0.33336 |
| BUK95180-100A,127 | NXP Semiconductors | MOSFET N-CH 100V 11A TO220AB | 3,000 | 1:$0.99000 10:$0.86300 25:$0.76400 100:$0.66560 250:$0.57928 500:$0.49300 1,000:$0.39440 2,500:$0.35742 5,000:$0.33278 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 40A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 14 毫歐 @ 10A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 19.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1264pF @ 30V |
| 功率 - 最大: | 65W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-VDFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝: | 8-QFN（3.3x3.3） |
| 包裝: | 剪切帶 (CT) |