元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 300 | 1:$1.66000 10:$1.46800 25:$1.32560 100:$1.16000 250:$1.01728 |
BUK7607-30B,118 | NXP Semiconductors | MOSFET N-CH 30V 75A D2PAK | 0 | 800:$0.81306 1,600:$0.73470 2,400:$0.68572 5,600:$0.65143 20,000:$0.62694 40,000:$0.60735 80,000:$0.58776 |
PSMN014-60LS,115 | NXP Semiconductors | MOSFET N-CH 60V QFN3333 | 0 | 1,400:$0.41670 2,800:$0.38892 7,000:$0.36947 9,800:$0.35558 35,000:$0.34447 70,000:$0.33336 |
BUK95180-100A,127 | NXP Semiconductors | MOSFET N-CH 100V 11A TO220AB | 3,000 | 1:$0.99000 10:$0.86300 25:$0.76400 100:$0.66560 250:$0.57928 500:$0.49300 1,000:$0.39440 2,500:$0.35742 5,000:$0.33278 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門(mén) |
漏極至源極電壓(Vdss): | 100V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 68A |
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 13.9 毫歐 @ 15A,10V |
Id 時(shí)的 Vgs(th)(最大): | 4V @ 1mA |
閘電荷(Qg) @ Vgs: | 59nC @ 10V |
輸入電容 (Ciss) @ Vds: | 3195pF @ 50V |
功率 - 最大: | 170W |
安裝類型: | 表面貼裝 |
封裝/外殼: | TO-263-3,D²Pak(2 引線+接片),TO-263AB |
供應(yīng)商設(shè)備封裝: | D2PAK |
包裝: | 剪切帶 (CT) |