| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIJ458DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8-SOIC | 0 | 3,000:$0.85725 6,000:$0.82550 15,000:$0.79375 30,000:$0.77788 75,000:$0.76200 |
| SI4465ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 13.7A 8SOIC | 248 | 1:$2.21000 25:$1.70120 100:$1.54350 250:$1.38600 500:$1.19700 1,000:$1.00800 |
| SIJ420DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 500 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SIJ420DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 500 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SI4896DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8SOIC | 504 | 1:$1.77000 25:$1.40120 100:$1.26090 250:$1.09744 500:$0.98070 1,000:$0.77055 |
| SIE864DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 646 | 1:$2.03000 25:$1.56880 100:$1.42350 250:$1.27820 500:$1.10390 1,000:$0.92960 |
| SI4896DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8SOIC | 0 | 2,500:$0.65380 5,000:$0.62111 12,500:$0.59542 25,000:$0.57908 62,500:$0.56040 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 60A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.2 毫歐 @ 20A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 122nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4810pF @ 15V |
| 功率 - 最大: | 69.4W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |