元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
SIJ420DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 500 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
SI4896DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8SOIC | 504 | 1:$1.77000 25:$1.40120 100:$1.26090 250:$1.09744 500:$0.98070 1,000:$0.77055 |
SIE864DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 646 | 1:$2.03000 25:$1.56880 100:$1.42350 250:$1.27820 500:$1.10390 1,000:$0.92960 |
SI4896DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8SOIC | 0 | 2,500:$0.65380 5,000:$0.62111 12,500:$0.59542 25,000:$0.57908 62,500:$0.56040 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 標準 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 50A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 2.6 毫歐 @ 15A,10V |
Id 時的 Vgs(th)(最大): | 2.4V @ 250µA |
閘電荷(Qg) @ Vgs: | 90nC @ 10V |
輸入電容 (Ciss) @ Vds: | 3630pF @ 10V |
功率 - 最大: | 62.5W |
安裝類型: | 表面貼裝 |
封裝/外殼: | PowerPAK? SO-8 |
供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
包裝: | 剪切帶 (CT) |