分離式半導(dǎo)體產(chǎn)品 DMN2015UFDE-7品牌、價(jià)格、PDF參數(shù)

DMN2015UFDE-7 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
DMN2015UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6E 5,960 1:$0.64000
10:$0.53600
25:$0.46920
100:$0.40170
250:$0.34840
500:$0.29510
1,000:$0.22750
DMN2013UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6 5,765 1:$0.64000
10:$0.53600
25:$0.46920
100:$0.40170
250:$0.34840
500:$0.29510
1,000:$0.22750
DMN2013UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6 5,765 1:$0.64000
10:$0.53600
25:$0.46920
100:$0.40170
250:$0.34840
500:$0.29510
1,000:$0.22750
DMN2013UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6 3,000 3,000:$0.20150
6,000:$0.18850
15,000:$0.17550
30,000:$0.16640
75,000:$0.16250
150,000:$0.15600
DMN2015UFDE-7 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 邏輯電平門(mén)
漏極至源極電壓(Vdss): 20V
電流 - 連續(xù)漏極(Id) @ 25° C: 10.5A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: 11.6 毫歐 @ 8.5A，4.5V
Id 時(shí)的 Vgs(th)（最大）: 1.1V @ 250µA
閘電荷(Qg) @ Vgs: 45.6nC @ 10V
輸入電容 (Ciss) @ Vds: 1779pF @ 10V
功率 - 最大: 660mW
安裝類型: 表面貼裝
封裝/外殼: 6-UDFN
供應(yīng)商設(shè)備封裝: *
包裝: 剪切帶 (CT)