元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 3,000 | 3,000:$0.20150 6,000:$0.18850 15,000:$0.17550 30,000:$0.16640 75,000:$0.16250 150,000:$0.15600 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 10.5A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 11 毫歐 @ 8.5A,4.5V |
Id 時(shí)的 Vgs(th)(最大): | 1.1V @ 250µA |
閘電荷(Qg) @ Vgs: | 25.8nC @ 8V |
輸入電容 (Ciss) @ Vds: | 2453pF @ 10V |
功率 - 最大: | 660mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-UDFN |
供應(yīng)商設(shè)備封裝: | * |
包裝: | 剪切帶 (CT) |