| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BUK662R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,790 | 1:$2.04000 10:$1.84500 25:$1.65320 100:$1.48640 250:$1.31984 |
| PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 2,437 | 1:$0.97000 10:$0.85700 25:$0.77400 100:$0.67740 250:$0.59404 500:$0.52684 |
| BUK662R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,000 | 800:$1.01230 1,600:$0.92901 2,400:$0.86495 5,600:$0.83291 20,000:$0.80088 40,000:$0.78806 80,000:$0.76884 |
| PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 1,500 | 1,500:$0.40320 3,000:$0.37632 7,500:$0.35750 10,500:$0.34406 37,500:$0.33331 75,000:$0.32256 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.8 毫歐 @ 25A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.8V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 114nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6960pF @ 25V |
| 功率 - 最大: | 204W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 剪切帶 (CT) |