| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SIS430DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V PPAK 1212-8 | 0 | 3,000:$0.43400 6,000:$0.41230 15,000:$0.39525 30,000:$0.38440 |
| SI4100DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 200 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| SI4425BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V 8-SOIC | 0 | 2,500:$0.38640 |
| SI4100DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 0 | 2,500:$0.53200 5,000:$0.50540 12,500:$0.48450 25,000:$0.47120 |
| SIHD3N50D-GE3 | Vishay Siliconix | MOSFET N-CH 500V 3A TO252 DPAK | 50 | 1:$1.02000 25:$0.80200 100:$0.72170 250:$0.62816 500:$0.56134 1,000:$0.44105 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 35A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 5.1 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 40nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1600pF @ 12.5V |
| 功率 - 最大: | 52W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK 1212-8 |
| 供應商設備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |