元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
IPW65R660CFD | Infineon Technologies | MOSFET N-CH 700V 6.0A TO247 | 0 | 1:$2.90000 10:$2.58500 100:$2.11990 250:$1.91308 500:$1.71660 1,000:$1.44774 2,500:$1.37535 5,000:$1.31848 10,000:$1.28228 |
IPI600N25N3 G | Infineon Technologies | MOSFET N-CH 250V 25A TO262-3 | 0 | 1:$2.90000 10:$2.59300 25:$2.33360 100:$2.12630 250:$1.91884 500:$1.72176 1,000:$1.45208 2,500:$1.37948 5,000:$1.32243 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 標(biāo)準(zhǔn) |
漏極至源極電壓(Vdss): | 700V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 6A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 660 毫歐 @ 2.1A,10V |
Id 時的 Vgs(th)(最大): | 4.5V @ 200µA |
閘電荷(Qg) @ Vgs: | 22nC @ 10V |
輸入電容 (Ciss) @ Vds: | 615pF @ 100V |
功率 - 最大: | 62.5W |
安裝類型: | 通孔 |
封裝/外殼: | TO-247-3 |
供應(yīng)商設(shè)備封裝: | PG-TO247-3 |
包裝: | 管件 |