元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
IPI65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO262 | 0 | 10,000:$3.86038 |
IPB530N15N3 G | Infineon Technologies | MOSFET N-CH 150V 21A TO263-3 | 2,000 | 1,000:$0.79489 2,000:$0.74007 5,000:$0.71266 10,000:$0.68525 25,000:$0.67155 50,000:$0.65784 |
IPI024N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | 0 | 500:$2.38508 |
IPD048N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | 0 | 2,500:$0.70322 |
IPD50R500CE | Infineon Technologies | MOSF 500V 7.6A PG-TO252 | 0 | 2,500:$0.70281 5,000:$0.67678 12,500:$0.65075 25,000:$0.63774 62,500:$0.62472 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 標(biāo)準(zhǔn) |
漏極至源極電壓(Vdss): | 650V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 31.2A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 110 毫歐 @ 12.7A,10V |
Id 時的 Vgs(th)(最大): | 4.5V @ 1.3mA |
閘電荷(Qg) @ Vgs: | 118nC @ 10V |
輸入電容 (Ciss) @ Vds: | 3240pF @ 100V |
功率 - 最大: | 277.8W |
安裝類型: | 通孔 |
封裝/外殼: | TO-262-3,長引線,I²Pak,TO-262AA |
供應(yīng)商設(shè)備封裝: | PG-TO262-3 |
包裝: | 管件 |