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參數(shù)資料
| 型號(hào)： | DTA125TUA |
| 廠商： | Rohm CO.,LTD. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Digital Transistor(Built in Resistor) |
| 中文描述： | 數(shù)字晶體管（內(nèi)置電阻） |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | DTA125TUA |
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
Digital transistor (built-in resistor)
DTA125TUA / DTA125TKA / DTA125TSA
!
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
300
150
55
～ +
150
DTA125TUA / DTA125TKA
DTA125TSA
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA125TUA
UMT3
9A
T106
3000
DTA125TKA
SMT3
9A
T146
3000
DTA125TSA
SPT
TP
5000
!
External dimensions
(Units : mm)
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
ROHM : SPT
EIAJ : SC-72
DTA125TSA
DTA125TKA
DTA125TUA
(3) Collector(Drain)
(1) Emitter(Source)
Each lead has same dimensions
1.25
2.1
0
0
0
0.1to0.4
(
0
0
0
0
(
2
1
(
0
(3) Collector(Drain)
(2) Base(Gate)
Each lead has same dimensions
0
0
0
0.3to0.6
1
(
(
2.8
1.6
0
(
2
1
0
0.45
2.5
(1) (2) (3)
(3) Base
(1) Emitter
(
5
3
3
Taping specifications
0.45
0.5
4
2
!
Electrical characteristics
(Ta = 25
°
C)
!
Circuit schematic
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
Min.
50
50
5
100
140
Typ.
250
200
Max.
0.5
0.5
0.3
600
260
Unit
V
V
V
μ
A
μ
A
V
k
Conditions
f
T
250
MHz
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
=
0.5mA , I
B
=
0.05mA
I
C
=
1mA , V
CE
=
5V
V
CE
=
10V , I
E
=
5mA , f
=
100MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Transition frequency
Transition frequency of the device.
C
B
E
R
1
E : Emitter
C : Collector
B : Base
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