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參數(shù)資料
| 型號： | DTA114TL-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 168K |
| 代理商： | DTA114TL-AE3-R |
DTA114T
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-061,B
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
-50
-5
-100
200
150
+150
-55~+150
UNIT
V
V
V
mA
mW
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SOT-23
SOT-323/SOT-523
Collector Power Dissipation
P
C
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIST ICS
(Ta= 25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
C
=-10mA, I
B
=-1mA
I
CBO
V
CB
=-50V
I
EBO
V
EB
=-4V
h
FE
V
CE
=-5V, I
C
=-1mA
R
1
f
T
V
CE
=-10V, I
E
=5mA, f=100MHz*
TEST CONDITIONS
I
C
=-50
μ
A
I
C
=-1mA
I
E
=-50
μ
A
MIN
-50
-50
-5
100
7
TYP MAX
250
10
250
UNIT
V
V
V
V
μ
A
μ
A
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
-0.3
-0.5
-0.5
600
13
k
MHz
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