參數(shù)資料
型號： DT28F160S3-120
廠商： INTEL CORP
元件分類： DRAM
英文描述： 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述： 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
封裝： 16 X 23.70 MM, SSOP-56
文件頁數(shù)： 49/52頁
文件大?。?/td> 1262K
代理商： DT28F160S3-120
E
6.2.7
28F160S3, 28F320S3
49
ADVANCE INFORMATION
ERASE, PROGRAM, AND LOCK-BIT CONFIGURATION PERFORMANCE
Table 23. Erase/Write/Lock Performance
(3,4)
2.7V
–3.6V V
CC
Version
2.7V V
PP
3.3V V
PP
5V V
PP
#
Sym
Parameter
Notes Typ
(1)
Max
Typ
(1)
Max
Typ
(1)
Max
Units
W16
Byte/word program time
(using write buffer)
5
5.76
TBD
5.76
TBD
2.76
TBD
μs
W16
t
WHQV1
t
EHQV1
Per byte program time
(without write buffer)
2
19.89
TBD
19.89
TBD
13.2
TBD
μs
W16
t
WHQV1
t
EHQV1
Per word program time
(without write buffer)
2
22.17
TBD
22.17
TBD
13.2
TBD
μs
W16
Block program time
(byte mode)
2
1.63
TBD
1.63
TBD
0.87
TBD
sec
W16
Block program time
(word mode)
2
0.91
TBD
0.91
TBD
0.44
TBD
sec
W16
Block program time
(using write buffer)
2
0.37
TBD
0.37
TBD
0.16
TBD
sec
W16
t
WHQV2
t
EHQV2
Block erase time
2
0.56
TBD
0.56
TBD
0.42
TBD
sec
W16
Full chip erase time
16 Mbit
17.9
17.9
13.3
sec
32 Mbit
35.8
35.8
26.6
sec
W16
t
WHQV3
t
EHQV3
Set Lock-Bit time
2
22.17
TBD
22.17
TBD
13.3
TBD
μs
W16
t
WHQV4
t
EHQV4
Clear block lock-bits time
2
0.56
TBD
0.56
TBD
0.42
TBD
sec
W16
t
WHRH1
t
EHRH1
Program suspend latency
time to read
7.24
10.2
7.24
10.2
6.73
9.48
μs
W16
t
WHRH2
t
EHRH2
Erase suspend latency time
to read
15.5
21.5
15.5
21.5
12.54 17.54
μs
NOTES:
1.
Typical values measured at T
= +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Uses whole buffer.
2.
3.
4.
5.
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