參數(shù)資料
型號(hào)： DSEI19-06
廠(chǎng)商： IXYS Corporation
英文描述： Fast Recovery Epitaxial Diode (FRED)
中文描述： 快速恢復(fù)外延二極管（弗雷德）
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 27K
代理商： DSEI19-06
2000 IXYS All rights reserved
1 - 1
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
V
RSM
V
RRM
Type
V
V
600
600
DSEI 19-06AS
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
T
VJ
= T
T
C
= 65 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
25
20
150
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
100
110
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
95
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
50
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
36
37
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
61
W
Weight
2
g
Symbol
Test Conditions
Characteristic Values
max.
typ.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
50
25
A
A
3
mA
V
F
I
F
= 16 A;
T
VJ
=150 C
T
VJ
= 25 C
1.5
1.7
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.12
23.2
V
m
R
thJC
2
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/ s; V
R
= 30 V; T
VJ
= 25 C
35
50
ns
I
RM
V
= 350 V;
L 0.05 H; T
VJ
= 100 C
I
F
= 12 A; -di
F
/dt = 100 A/ s
4
4.4
A
Characteristic curves are located in the data sheet DSEI 12-06
DSEI 19
V
RRM
= 600 V
I
FAVM
= 20 A
t
rr
= 35 ns
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 AA Outline
Features
G
International standard surface mount
package JEDEC TO-263 AA
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Fast Recovery
Epitaxial Diode (FRED)
A
C
TO-263 AA
A
=
Anode,
C
=
Cathode,
NC = No connection, TAB = Cathode
NC
A
C (TAB)
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DSEI19-06AS Fast Recovery Epitaxial Diode (FRED)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DSEI19-06AS 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 19 Amps 600V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
DSEI19-06AS-TUB 功能描述:肖特基二極管與整流器 Fast Recovery Exitaxil Diode FRED RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
DSEI20 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED)
DSEI20-12A 功能描述:整流器 1200V 17A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEI2X101 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED)
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