參數資料
型號： DSEE29-12CC
廠商： IXYS CORP
元件分類： 參考電壓二極管
英文描述： HiPerDynFRED Epitaxial Diode(正向電流30A的HiPerDynFRED外延型二極管)
中文描述： 30 A, 600 V, SILICON, RECTIFIER DIODE
封裝： PLASTIC, ISOPLUS220, 3 PIN
文件頁數： 1/2頁
文件大?。?/td> 59K
代理商： DSEE29-12CC
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
V
RRM
= 1200 V
t
rr
= 30 ns
= 30 A
V
RRM
V
V
RRM
V
Type
1200
600
DSEE29-12CC
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
60
30
A
A
T
C
= 90°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
200
A
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 μH
0.2
mJ
I
AR
T
VJ
T
VJM
T
stg
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
175
-55...+150
°C
°C
°C
T
L
P
tot
V
ISOL
F
C
Weight
1.6 mm (0.063 in) from case for 10 s 260
°
C
T
C
= 25°C
165
W
50/60 Hz RMS; I
ISOL
≤
1 mA
2500
V~
Mounting force
11...65 / 2.5...15 N / lb
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
V
R
= V
RRM
200
μA
T
VJ
= 150°C V
R
= V
RRM
2
mA
V
F
I
F
= 30 A;
T
VJ
= 125°C
T
VJ
= 25°C
1.75
2.5
V
V
R
thJC
R
thCH
t
rr
0.9
K/W
K/W
0.6
I
F
= 1 A; -di/dt = 200 A/μs;
V
R
= 30 V
30
ns
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
4
A
98814 (05/01)
2001 IXYS All rights reserved
DSEE29-12CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
μ
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
相關PDF資料
PDF描述
DSEE55-24N1F Dual HiPerFRED Epitaxial Diode
DSEE8-06CC HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二極管)
DSEI12-06A Fast Recovery Epitaxial Diode (FRED)
DSEI12-10A Fast Recovery Epitaxial Diode (FRED)
DSEI12 Fast Recovery Epitaxial Diode (FRED)(正向電流12A的快速恢復外延型二極管)
相關代理商/技術參數
參數描述
DSEE30-12A 功能描述:整流器 1200V 30A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEE55-24N1F 功能描述:整流器 55 Amps 1200V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEE6-06CC 功能描述:整流器 6 Amps 600V 2.7 Rds RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEE8-06CC 功能描述:整流器 10 Amps 600V 1.75 Rds RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEE8-08CC 功能描述:二極管 - 通用，功率，開關 8 Amps 400V RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
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