參數(shù)資料
型號(hào): DS90LV804TSQX/NOPB
廠商: National Semiconductor
文件頁數(shù): 8/15頁
文件大?。?/td> 0K
描述: IC BUFFER/REPEATR LVDS 4CH 32LLP
標(biāo)準(zhǔn)包裝: 4,500
類型: 緩沖器
Tx/Rx類型: LVDS
延遲時(shí)間: 3.2ns
電容 - 輸入: 3.5pF
電源電壓: 3.15 V ~ 3.45 V
電流 - 電源: 140mA
安裝類型: 表面貼裝
封裝/外殼: 32-WFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 32-LLP-EP(5x5)
包裝: 帶卷 (TR)
其它名稱: DS90LV804TSQX
8
7
6
5
4
3
2
1
17 18
19
20
21
22
23 24
32
31
30
29
28
27
26
25
9
10
11
12
13
14
15
16
DAP
(GND)
OUT0+
OUT0-
OUT1+
OUT1-
OUT2+
OUT2-
OUT3+
OUT3-
IN0+
IN0-
IN1+
IN1-
IN2+
IN2-
IN3+
IN3-
EN
V
D
V
D
G
N
D
V
D
V
D
G
N
D
G
N
D
G
N
D
G
N
D
V
D
V
D
V
D
V
D
N
/C
N
/C
SNLS195L – SEPTEMBER 2005 – REVISED APRIL 2013
DS90LV804 WQFN Pinout
(Top View)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (VDD)
0.3V to +4.0V
CMOS Input Voltage (EN)
0.3V to (VDD+0.3V)
LVDS Input Voltage(2)
0.3V to (VDD+0.3V)
LVDS Output Voltage
0.3V to (VDD+0.3V)
LVDS Output Short Circuit Current
+90 mA
Junction Temperature
+150°C
Storage Temperature
65°C to +150°C
Lead Temperature (Solder, 4sec)
260°C
Max Pkg Power Capacity @ 25°C
4.16W
θJA
29.5°C/W
Thermal Resistance
θJC
3.5°C/W
Package Derating above +25°C
33.3mW/°C
HBM, 1.5k
, 100pF
12 kV
ESD Last Passing Voltage (LVDS output pins)
EIAJ, 0
, 200pF
250V
Charged Device Model
1000V
HBM, 1.5k
, 100pF
8 kV
ESD Last Passing Voltage (All other pins)
EIAJ, 0
, 200pF
250V
Charged Device Model
1000V
(1)
Absolute maximum ratings are those values beyond which damage to the device may occur. The databook specifications should be met,
without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. TI
does not recommend operation of products outside of recommended operation conditions.
(2)
VID max < 2.4V
2
Copyright 2005–2013, Texas Instruments Incorporated
Product Folder Links: DS90LV804
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