(VCC
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� DS89C440-ENL
寤犲晢锛� Maxim Integrated Products
鏂囦欢闋�(y猫)鏁�(sh霉)锛� 3/46闋�(y猫)
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC MCU FLASH 32KB 33MHZ 44-TQFP
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 160
绯诲垪锛� 89C
鏍稿績铏曠悊鍣細 8051
鑺珨灏哄锛� 8-浣�
閫熷害锛� 33MHz
閫ｉ€氭€э細 EBI/EMI锛孲IO锛孶ART/USART
澶栧湇瑷�(sh猫)鍌欙細 闆绘簮鏁呴殰寰�(f霉)浣嶏紝WDT
杓稿叆/杓稿嚭鏁�(sh霉)锛� 32
绋嬪簭瀛樺劜(ch菙)鍣ㄥ閲忥細 32KB锛�32K x 8锛�
绋嬪簭瀛樺劜(ch菙)鍣ㄩ鍨嬶細 闁冨瓨
RAM 瀹归噺锛� 1K x 8
闆诲 - 闆绘簮 (Vcc/Vdd)锛� 4.5 V ~ 5.5 V
鎸暕鍣ㄥ瀷锛� 澶栭儴
宸ヤ綔婧害锛� -40°C ~ 85°C
灏佽/澶栨锛� 44-TQFP
鍖呰锛� 鎵樼洡(p谩n)
DS89C430/DS89C450 Ultra-High-Speed Flash Microcontrollers
11 of 46
POWER-CYCLE TIMING CHARACTERISTICS
(VCC = 4.5V to 5.5V, TO = -40掳C to +85掳C.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Crystal Startup Time (Note 18)
tCSU
8
ms
Power-On Reset Delay (Note 19)
tPOR
65,536
tCLCL
Note 18: Startup time for a crystal varies with load capacitance and manufacturer. The time shown is for an 11.0592MHz crystal manufactured
by Fox Electronics.
Note 19: Reset delay is a synchronous counter of crystal oscillations after crystal startup. Counting begins when the level on the XTAL1 pin
meets the VIH2 criteria. At 33MHz, this time is 1.99ms.
FLASH MEMORY PROGRAMMING CHARACTERISTICS
(VCC = 4.5V to 5.5V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Data Retention
tDR
100
years
Write/Erase Endurance
tENDURE
10,000
cycles
Program/Time
tPROG
40
s
Erase Time
tERASE
4
ms
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
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鍙冩暩(sh霉)鎻忚堪
DS89C440-ENL+ 鍔熻兘鎻忚堪:8浣嶅井鎺у埗鍣� -MCU RoHS:鍚� 鍒堕€犲晢:Silicon Labs 鏍稿績:8051 铏曠悊鍣ㄧ郴鍒�:C8051F39x 鏁�(sh霉)鎿�(j霉)绺界窔瀵害:8 bit 鏈€澶ф檪(sh铆)閻橀牷鐜�:50 MHz 绋嬪簭瀛樺劜(ch菙)鍣ㄥぇ灏�:16 KB 鏁�(sh霉)鎿�(j霉) RAM 澶у皬:1 KB 鐗囦笂 ADC:Yes 宸ヤ綔闆绘簮闆诲:1.8 V to 3.6 V 宸ヤ綔婧害鑼冨湇:- 40 C to + 105 C 灏佽 / 绠遍珨:QFN-20 瀹夎棰�(f膿ng)鏍�:SMD/SMT
DS89C440-MNG 鍔熻兘鎻忚堪:IC MCU FLASH 32KB 25MHZ 40-DIP RoHS:鍚� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 宓屽叆寮� - 寰帶鍒跺櫒锛� 绯诲垪:89C 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 妯�(bi膩o)婧�(zh菙n)鍖呰:260 绯诲垪:73S12xx 鏍稿績铏曠悊鍣�:80515 鑺珨灏哄:8-浣� 閫熷害:24MHz 閫ｉ€氭€�:I²C锛屾櫤鑳藉崱锛孶ART/USART锛孶SB 澶栧湇瑷�(sh猫)鍌�:LED锛孭OR锛學DT 杓稿叆/杓稿嚭鏁�(sh霉):9 绋嬪簭瀛樺劜(ch菙)鍣ㄥ閲�:64KB锛�64K x 8锛� 绋嬪簭瀛樺劜(ch菙)鍣ㄩ鍨�:闁冨瓨 EEPROM 澶у皬:- RAM 瀹归噺:2K x 8 闆诲 - 闆绘簮 (Vcc/Vdd):2.7 V ~ 5.5 V 鏁�(sh霉)鎿�(j霉)杞�(zhu菐n)鎻涘櫒:- 鎸暕鍣ㄥ瀷:鍏�(n猫i)閮� 宸ヤ綔婧害:-40°C ~ 85°C 灏佽/澶栨:68-VFQFN 瑁搁湶鐒婄洡(p谩n) 鍖呰:绠′欢
DS89C440-MNL 鍔熻兘鎻忚堪:IC MCU FLASH 32KB 33MHZ 40-DIP RoHS:鍚� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 宓屽叆寮� - 寰帶鍒跺櫒锛� 绯诲垪:89C 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 妯�(bi膩o)婧�(zh菙n)鍖呰:260 绯诲垪:73S12xx 鏍稿績铏曠悊鍣�:80515 鑺珨灏哄:8-浣� 閫熷害:24MHz 閫ｉ€氭€�:I²C锛屾櫤鑳藉崱锛孶ART/USART锛孶SB 澶栧湇瑷�(sh猫)鍌�:LED锛孭OR锛學DT 杓稿叆/杓稿嚭鏁�(sh霉):9 绋嬪簭瀛樺劜(ch菙)鍣ㄥ閲�:64KB锛�64K x 8锛� 绋嬪簭瀛樺劜(ch菙)鍣ㄩ鍨�:闁冨瓨 EEPROM 澶у皬:- RAM 瀹归噺:2K x 8 闆诲 - 闆绘簮 (Vcc/Vdd):2.7 V ~ 5.5 V 鏁�(sh霉)鎿�(j霉)杞�(zhu菐n)鎻涘櫒:- 鎸暕鍣ㄥ瀷:鍏�(n猫i)閮� 宸ヤ綔婧害:-40°C ~ 85°C 灏佽/澶栨:68-VFQFN 瑁搁湶鐒婄洡(p谩n) 鍖呰:绠′欢
DS89C440-MNL+ 鍒堕€犲晢:Rochester Electronics LLC 鍔熻兘鎻忚堪: 鍒堕€犲晢:Maxim Integrated Products 鍔熻兘鎻忚堪:
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鐧�(f膩)甯冪穵鎬ラ噰璩�(g貌u)锛�3鍒嗛悩宸﹀彸鎮ㄥ皣寰楀埌鍥炲京(f霉)銆�

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*鍨嬭櫉(h脿o) *鏁�(sh霉)閲� 寤犲晢 鎵硅櫉(h脿o) 灏佽
娣诲姞鏇村閲囪臣(g貌u)

鎴戠殑鑱�(li谩n)绯绘柟寮�

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