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參數資料
| 型號： | DS60R-TRL |
| 英文描述： | VOLTAGE REG POS 6V 100MA TO-92 |
| 中文描述： | 微攝氏溫度傳感器 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | DS60R-TRL |
DS60
2 of 4
102299
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Output Current
Operating Temperature
Storage Temperature
ESD Susceptibility (Human Body Model)
Soldering Temperature (Note 2)
GND -0.3V to +6.5V
5.0 mA
-40°C to +125°C
-55°C to +150°C
2kV
215°C for 60 seconds (Vapor Phase)
220°C for 15 seconds (IR)
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require. For specific reliability information on this product, please
contact the factory in Dallas at (972) 371–4448.
RECOMMENDED DC OPERATING CONDITIONS
(-40°C to +125°C; 2.7V
≤
V
DD
≤
5.5V)
MIN
TYP
MAX
2.7
5.5
PARAMETER
Supply Voltage
SYMBOL
V
DD
CONDITION
UNITS
V
NOTES
1
DC ELECTRICAL CHARACTERISTICS:
Power Supply (Note 3)
PARAMETER
SYMBOL
Supply Current
(-40°C to +125°C; 2.7V
≤
V
DD
≤
5.5V)
MIN
TYP
MAX
80
125
CONDITION
UNITS
μA
NOTES
I
DD
DC ELECTRICAL CHARACTERISTICS:
Temperature Sensor and Voltage Output (Note 3)
(-40°C to +125°C; 2.7V
≤
V
DD
≤
5.5V)
MIN
TYP
MAX
PARAMETER
SYMBOL
CONDITION
-40°C
≤
T
A
≤
125°C
0°C
≤
T
A
≤
85°C
T = 0°C
UNITS
NOTES
±3
Thermometer Error
T
ERR
±2
°C
4
V
O
DC Offset
Sensor Gain
Nonlinearity
424
6.25
mV
mV/°C
°C
1
V/
T
6.0
6.5
±0.8
5
2.7V
≤
V
DD
≤
3.3V
3.0V
≤
V
DD
≤
5.5V
±2.0
mV
Power Supply
Regulation
±0.25
mV/V
Sensor Drift
Output Impedance
±0.25
°C
6
800
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