
D
4-Channel Cold-Cathode
Fluorescent Lamp Controller
4
_____________________________________________________________________
I
2
C AC ELECTRICAL CHARACTERISTICS (See Figure 10)
(V
CC
= +4.5V to +5.5V, timing referenced to V
IL(MAX)
and V
IH(MIN)
, T
A
= -40
°
C to +85
°
C.)
Note 1:
Note 2:
All voltages are referenced to ground, unless otherwise noted. Currents into the IC are positive, out of the IC negative.
During fault conditions, the AC-coupled feedback values are allowed to be outside the Absolute Maximum Rating of the
LCM or OVD pin for up to 1 second.
Voltage including the DC offset, VDCB.
This is the minimum pulse width guaranteed to generate an output burst, which will generate the DS3994
’
s minimum burst
duty cycle. This duty cycle may be greater than the duty cycle of the PSYNC input. Once the duty cycle of the PSYNC input
is greater than the DS3994
’
s minimum duty cycle, the output
’
s duty cycle will track the PSYNC
’
s duty cycle. Leaving
PSYNC low (0% duty cycle) disables the GAn and GBn outputs in DPWM Slave mode.
This is the maximum lamp frequency duty cycle that will be generated at any of the GAn or GBn outputs.
I
2
C interface timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I
2
C stan-
dard-mode timing.
After this period, the first clock pulse can be generated.
CB
—
total capacitance allowed on one bus line in picofarads.
EEPROM write begins after a stop condition occurs.
Note 10:
Guaranteed by design.
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
PARAMETER
SYMBOL
f
SCL
CONDITIONS
MIN
0
TYP
MAX
400
UNITS
kHz
SCL Clock Frequency
(Note 6)
Bus Free Time Between Stop and
Start Conditions
t
BUF
1.3
μs
Hold Time (Repeated) Start
Condition
t
HD:STA
(Note 7)
0.6
μs
Low Period of SCL
High Period of SCL
Data Hold Time
Data Setup Time
Start Setup Time
t
LOW
t
HIGH
t
HD:DAT
t
SU:DAT
t
SU:STA
1.3
0.6
0
100
0.6
μs
μs
μs
ns
μs
0.9
SDA and SCL Rise Time
t
R
(Note 8)
20 +
0.1C
B
300
ns
SDA and SCL Fall Time
t
F
(Note 8)
20 +
0.1C
B
0.6
300
ns
Stop Setup Time
t
SU:STO
μs
SDA and SCL Capacitive
Loading
C
B
(Note 8)
400
pF
EEPROM Write Time
t
W
(Note 9)
20
30
ms
NONVOLATILE MEMORY CHARACTERISTICS
(V
CC
= +4.5V to +5.5V)
PARAMETER
SYMBOL
CONDITIONS
MIN
50,000
TYP
MAX
UNITS
Cycles
EEPROM Write Cycles
+70
°
C (Note 10)