參數(shù)資料
型號(hào): DS3901E+T&R
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 20/20頁(yè)
文件大?。?/td> 0K
描述: IC RESIST VAR TRPL 14TSSOP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
接片: 256
電阻(歐姆): 20k,30k,50k
電路數(shù): 3
溫度系數(shù): 標(biāo)準(zhǔn)值 50 ppm/°C
存儲(chǔ)器類型: 非易失
接口: I²C(設(shè)備位址)
電源電壓: 2.4 V ~ 5.5 V
工作溫度: -40°C ~ 95°C
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 14-TSSOP
包裝: 帶卷 (TR)
DS3901
Triple, 8-Bit NV Variable Resistor
with Dual Settings and User EEPROM
_____________________________________________________________________
9
Memory Map
The memory consists of 256 bytes and is write-protected
with a two-level password scheme. Table 1 below shows
how the memory map is organized. Register details are
discussed in the Register Descriptions section.
Table 1. Memory Map
ACCESS
DESCRIPTION
ADDR
BINARY
MSB
LSB
FACTORY
DEFAULT
NO PW
PW1
PW2
TYPE
Lower Memory
00–7Fh
PW2 EEPROM
00h
R
R/W
EEPROM
Memory
80–83h
PW1 EEPROM
00h
R
R/W
EEPROM
Configuration
84h
L0_SW
BSC HiZ2
HiZ1
HiZ0
00h
R
R/W
EEPROM
Memory
85–87h
PW1 EEPROM
00h
R
R/W
EEPROM
Password Entry
88–8Bh
MSB–LSB
00h
W
SRAM
Memory
8C–8Eh
SRAM
00h
R/W
SRAM
Status
8Fh
0
BSS
0
DISS
000x000xb
R
SRAM
Password Setting
PW1
90–93h
MSB–LSB
00h
——
W
EEPROM
Password Setting
PW2
94–97h
MSB–LSB
00h
——
W
EEPROM
Resistor 0 Bank 0
98h
7Fh
R
R/W
EEPROM
Resistor 1 Bank 0
99h
7Fh
R
R/W
EEPROM
Resistor 2 Bank 0
9Ah
7Fh
R
R/W
EEPROM
Memory
9Bh
PW2 EEPROM
00h
R
R/W
EEPROM
Resistor 0 Bank 1
9Ch
7Fh
R
R/W
EEPROM
Resistor 1 Bank 1
9Dh
7Fh
R
R/W
EEPROM
Resistor 2 Bank 1
9Eh
7Fh
R
R/W
EEPROM
Slave Address
9Fh
I2C SLAVE ADDRESS
A0h
R
R/W
EEPROM
Memory
A0h–FFh
PW2 EEPROM
00h
R
R/W
EEPROM
MEMORY REGISTERS 00h–7Fh: PW2 EEPROM
Factory Default:
00h
Access Without Password:
Read only
Access With PW1 Password:
Read only
Access With PW2 Password:
Read and Write
Memory Type:
Nonvolatile (EEPROM)
00h–7Fh
EEPROM
Register Descriptions
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