參數(shù)資料
型號: DS2433
廠商: DALLAS SEMICONDUCTOR
元件分類: Programmable ROM
英文描述: 512 X 8 1-WIRE SERIAL EEPROM, PBCY3
文件頁數(shù): 12/19頁
文件大?。?/td> 457K
代理商: DS2433
DS2433
2 of 19
from the 1-Wire communication line. The memory is organized as sixteen pages of 256 bits each. The
scratchpad is an additional page that acts as a buffer when writing to memory. Data is first written to the
scratchpad where it may be read back for verification. A copy scratchpad command will then transfer the
data to memory. This process insures data integrity when modifying the memory. The 64-bit registration
number provides a guaranteed unique identity which allows for absolute traceability and acts as node
address if multiple DS2433 are connected in parallel to form a local network. Data is transferred serially
via the 1-Wire protocol which requires only a single data lead and a ground return. The PR-35 and SOIC
packages provide a compact enclosure that allows standard assembly equipment to handle the device
easily for attachment to printed circuit boards or wiring.
Typical applications include storage of
calibration constants, board identification and product revision status.
OVERVIEW
The block diagram in Figure 1 shows the relationships between the major control and memory sections of
the DS2433.
The DS2433 has three main data components: 1) 64-bit lasered ROM, 2) 256-bit
scratchpad, and 3) 4096-bit EEPROM. The hierarchical structure of the 1-Wire protocol is shown in
Figure 2. The bus master must first provide one of the six ROM Function Commands, 1) Read ROM, 2)
Match ROM, 3) Search ROM, 4) Skip ROM, 5) Overdrive-Skip ROM or 6) Overdrive-Match ROM.
Upon completion of an overdrive ROM command byte executed at standard speed, the device will enter
Overdrive mode where all subsequent communication occurs at a higher speed. The protocol required for
these ROM function commands is described in Figure 9. After a ROM function command is successfully
executed, the memory functions become accessible and the master may provide any one of the four
memory function commands. The protocol for these memory function commands is described in Figure
7. All data is read and written least significant bit first.
PARASITE POWER
The block diagram (Figure 1) shows the parasite-powered circuitry.
This circuitry “steals” power
whenever the I/O input is high. I/O will provide sufficient power as long as the specified timing and
voltage requirements are met.
DS2433 BLOCK DIAGRAM Figure 1
相關(guān)PDF資料
PDF描述
DS2433X 4K X 1 1-WIRE SERIAL EEPROM, UUC2
DS2433S 512 X 8 1-WIRE SERIAL EEPROM, PDSO8
DS2434S SPECIALTY MEMORY CIRCUIT, PDSO16
DS2434 SPECIALTY MEMORY CIRCUIT, PBCY3
DS2435 SPECIALTY MEMORY CIRCUIT, PBCY3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS2433+ 功能描述:電可擦除可編程只讀存儲器 4Kb 1-Wire 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
DS2433AX-S#T 制造商:Maxim Integrated Products 功能描述:- Tape and Reel
DS2433D/T&R 制造商:Maxim Integrated Products 功能描述:IC EEPROM 4KBIT 6FLIPCHIP
DS2433D/T&R 功能描述:IC EEPROM 4KBIT 6FCHIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設(shè)備封裝:8-DFN(2x3) 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
DS2433G+T&R 制造商:Maxim Integrated Products 功能描述:IC EEPROM 4KBIT 2SFN