參數(shù)資料
型號(hào): DS232AS-N
廠商: DALLAS SEMICONDUCTOR
元件分類: Line Driver or Receiver
英文描述: LINE TRANSCEIVER, PDSO16
封裝: 0.300 INCH, SOIC-16
文件頁數(shù): 12/23頁
文件大?。?/td> 409K
代理商: DS232AS-N
MAX15026
Low-Cost, Small, 4.5V to 28V Wide Operating
Range, DC-DC Synchronous Buck Controller
2
Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VIN = 12V, RRT = 27k, RLIM = 30k, CVCC = 4.7F, CIN = 1F, TA = -40°C to +85°C (MAX15026B/CETD+, MAX15026BETD/V+),
TA = TJ = -40°C to +125°C (MAX15026B/C/DATD+), unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Dissipation wattage values are based on still air with no heatsink. Actual maximum power dissipation is a function of heat
extraction technique and may be substantially higher. Package thermal resistances were obtained using the method
described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal consid-
IN to GND ...............................................................-0.3V to +30V
BST to GND ............................................................-0.3V to +36V
LX to GND .................................................................-1V to +30V
EN to GND................................................................-0.3V to +6V
PGOOD to GND .....................................................-0.3V to +30V
BST to LX..................................................................-0.3V to +6V
DH to LX ...............................................….-0.3V to (VBST + 0.3V)
DRV to GND .............................................................-0.3V to +6V
DL to GND ................................................-0.3V to (VDRV + 0.3V)
VCC to GND...............-0.3V to the lower of +6V and (VIN + 0.3V)
All Other Pins to GND.................................-0.3V to (VCC + 0.3V)
VCC Short Circuit to GND ...........................................Continuous
DRV Input Current.............................................................600mA
PGOOD Sink Current ............................................................5mA
Continuous Power Dissipation (TA = +70°C) (Note 1)
14-Pin TDFN-EP, Multilayer Board
(derate 24.4mW/°C above +70°C) ..............................1951mW
Operating Temperature Range
MAX15026B/CETD+, MAX15026BETD/V+.......-40°C to +85°C
MAX15026B/C/DATD+ ...................................-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL
4.5
28
Input Voltage Range
VIN
VIN = VCC = VDRV
4.5
5.5
V
Quiescent Supply Current
VFB = 0.9V, no switching
1.75
2.75
mA
Shutdown Supply Current
IIN_SBY
EN = GND
290
500
A
Enable to Output Delay
480
s
VCC High to Output Delay
EN = VCC
375
s
VCC REGULATOR
6V < VIN < 28V, ILOAD = 25mA
Output Voltage
VCC
VIN = 12V, 1mA < ILOAD < 70mA
5.0
5.25
5.5
V
VCC Regulator Dropout
VIN = 4.5V, ILOAD = 70mA
0.28
V
VCC Short-Circuit Output Current
VIN = 5V
100
200
300
mA
VCC Undervoltage Lockout
VCC_UVLO
VCC rising
3.8
4.0
4.2
V
VCC Undervoltage Lockout
Hysteresis
400
mV
ERROR AMPLIFIER (FB, COMP)
FB Input Voltage Set-Point
VFB
585
591
597
mV
FB Input Bias Current
IFB
VFB = 0.6V
-250
+250
nA
FB to COMP Transconductance
gM
ICOMP = ±20A
600
1200
1800
S
Amplifier Open-Loop Gain
80
dB
Amplifier Unity-Gain Bandwidth
Capacitor from COMP to GND = 50pF
4
MHz
VCOMP-RAMP Minimum Voltage
160
mV
COMP Source/Sink Current
ICOMP
VCOMP = 1.4V
50
80
110
A
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