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參數(shù)資料
| 型號： | DS2223 |
| 英文描述： | EconoRAM |
| 中文描述： | 經(jīng)濟型RAM |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 102K |
| 代理商： | DS2223 |
DS2223/DS2224
080598 10/10
AC ELECTRICAL CHARACTERISTICS
(–40
°
C to +85
°
C; V
CC
=1.4V
±
10%)
MAX
UNITS
PARAMETER
SYMBOL
MIN
TYP
NOTES
Time Slot
t
SLOT
70
μ
s
Read Data Valid
t
RDV
exactly 15
μ
s
Release Time
t
RELEASE
0
15
45
μ
s
Write 1 Low Time
t
LOW1
1
15
μ
s
Write 0 Low Time
t
LOW0
60
μ
s
Data Setup Time
t
SU
1
μ
s
8
Recovery Time
t
REC
1
μ
s
AC ELECTRICAL CHARACTERISTICS
(–40
°
C to +85
°
C; V
CC
=2.0V to 5.5V)
MAX
UNITS
PARAMETER
SYMBOL
MIN
TYP
NOTES
Time Slot
t
SLOT
60
μ
s
Read Data Valid
t
RDV
exactly 15
μ
s
Release Time
t
RELEASE
0
15
45
μ
s
Write 1 Low Time
t
LOW1
1
15
μ
s
Write 0 Low Time
t
LOW0
60
μ
s
Data Setup Time
t
SU
1
μ
s
8
Recovery Time
t
REC
1
μ
s
NOTES:
1. All voltages are referenced to ground.
2. V
PUP
= external pull–up voltage to system sypply.
3. Input pull–down resistance to ground.
4. @ V
OL
=0.4V
5. 36 nanocoulombs per 264 time slots @ 1.5V (see Figure 6).
6. See Figure 7 for typical values over temperature.
7. @ V
OL
=0.2V
8. Read data setup time refers to the time the host must pull the 1–Wire line low to read a bit. Data is guaran-
teed to be valid within 1
μ
s of this falling edge and will remain valid for 14
μ
s minimum (15
μ
s total from falling
edge on the 1–Wire line).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS2224 | EconoRAM |
| DS2224T | EconoRAM |
| DS2224Y | EconoRAM |
| DS2224Z | EconoRAM |
| DS2223Y | EconoRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2223T | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:EconoRAM |
| DS2223Y | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:EconoRAM |
| DS2223Z | 制造商:Maxim Integrated Products 功能描述: |
| DS2224 | 制造商:Maxim Integrated Products 功能描述: |
| DS2224T | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:EconoRAM |
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