參數資料
型號: DS2148G
廠商: DALLAS SEMICONDUCTOR
元件分類: Digital Transmission Interface
英文描述: DATACOM, PCM TRANSCEIVER, BGA49
封裝: CABGA-49
文件頁數: 6/13頁
文件大?。?/td> 178K
代理商: DS2148G
MAX8600/MAX8601
Single-/Dual-Input 1-Cell Li+ Chargers with
OVP Protection and Programmable Charge Timer
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC, USB to GND ....................................................-0.3V to +16V
BAT, CT, CHG, EN, FLT, SETI,
POK, THM, USEL to GND..................................-0.3V to +6.0V
Continuous Power Dissipation (TA = +70°C)
14-Pin TDFN 3mm x 3mm Multilayer PCB
(derate 24.4mW/°C above +70°C) ........................ 1951.2mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
ELECTRICAL CHARACTERISTICS
(VDC = VUSB = 5V, VBAT = 4V, V EN = 0V, RSETI = 2k
Ω, CCT = 0.068F, TA = -40°C to +85°C, unless otherwise noted. Typical values
are at TA = +25
°C. Note 1)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
DC OR USB (Note 2)
Input Voltage Range
014
V
Input Operating Range
(Note 3)
4.15
7.00
V
Input Undervoltage Threshold
Input rising, 500mV hysteresis (typ)
3.85
4.0
4.15
V
Input Overvoltage Threshold
Input rising, 200mV hysteresis (typ)
7.2
7.5
7.8
V
Input Overvoltage Delay
From overvoltage event to charger disabled
0.25
s
Input Supply Current
IBAT = 0mA, RTHM = 10k
Ω
750
1200
A
Shutdown Input Current
VEN = 5V, TA = +25°C
275
435
A
Input to BAT On-Resistance
Input = 3.7V, VBAT = 3.6V
0.5
0.8
Ω
Input to BAT Dropout Voltage
Input falling, 200mV hysteresis (typ)
5
55
120
mV
BAT
TA = +25°C
4.179
4.2
4.221
BAT Regulation Voltage
IBAT = 0mA
TA = -40°C to +85°C
4.166
4.2
4.234
V
BAT Restart Fast-Charge
Threshold
From BAT regulation voltage
-180
-150
-120
mV
RSETI = 1.5k
Ω
950
1000
1050
RSETI = 2k
Ω
727
750
773
RSETI = 5k
Ω
280
300
320
DC Charging Current
VUSB = 0V
Prequal, RSETI = 2k
Ω, VBAT = 2.5V
60
75
90
mA
VUSEL = 5V
450
475
500
VUSEL = 0V
80
95
100
USB Charging Current
VDC = 0V
Prequal, RSETI = 2k
Ω, VBAT = 2.5V
60
75
90
mA
Soft-Start Time
Ramp time to fast-charge current
1.2
ms
BAT Prequal Threshold
VBAT rising, 180mV hysteresis (typ)
2.9
3.0
3.1
V
BAT Leakage Current
VDC = VUSB = 0V, VBAT = 4.2V
0.001
5A
SETI
RSETI Resistance Range
Guaranteed by charging current
1.5
5.0
k
Ω
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