參數(shù)資料
型號(hào): DS2064
英文描述: 8K x 8 Static RAM
中文描述: 8K的× 8靜態(tài)RAM
文件頁數(shù): 7/9頁
文件大小: 73K
代理商: DS2064
DS2064
022598 7/9
NOTES:
1. WE is high for read cycles.
2. OE = V
IH
or V
IL
. If OE = V
IH
during write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the
earlier of CE or WE going high.
4. t
DH
and t
DS
are measured from the earlier of CE or WE going high.
5. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain
in a high impedance state.
6. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
in a high impedance state.
7. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers
remain in a high impedance state.
8. If the V
IH
level of CE is 2.0V during the period that V
CC
voltage is going down from 4.5V to 2.7V, I
CCS1
current
flows.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0V – 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5 ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS2064-200 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:8K x 8 Static RAM
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DS2064S-200 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:8K x 8 Static RAM
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DS2065W-100 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube