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參數(shù)資料
| 型號： | DS2016R-100 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 STANDARD SRAM, 250 ns, PDSO24 |
| 封裝： | 0.300 INCH, SO-24 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 254K |
| 代理商： | DS2016R-100 |
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FEATURES
§ Low-power CMOS design
§ Standby current
50 nA max at t
A = 25°C VCC = 3.0V
100 nA max at t
A = 25°C VCC = 5.5V
1 A max at t
A = 60°C VCC = 5.5V
§ Full operation for V
CC = 5.5V to 2.7V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
DS2016 - 100
100 ns
DS2016 - 150
150 ns
§ Reduced-speed 3V access time
DS2016 - 100
250 ns
DS2016 - 150
250 ns
§ Operating temperature range of -40°C to
+85°C
§ Full static operation
§ TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7 volts.
§ Available in 24-pin DIP and 24-pin SOIC
packages
§ Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A10
- Address Inputs
DQ0 - DQ7
- Data Input/Output
CE
- Chip Enable Input
WE
- Write Enable Input
OE
- Output Enable Input
VCC
- Power Supply Input 2.7V - 5.5V
GND
- Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.
DS2016
2k x 8 3V/5V Operation Static RAM
www.dalsemi.com
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VCC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
DS2016 24-Pin DIP (600-mil)
DS2016R 24-Pin SOIC (300-mil)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS2016-100 | 2K X 8 STANDARD SRAM, 100 ns, PDIP24 |
| DS2105Z | 9-LINE 110 ohm SCSI BUS TERMINATOR, PDSO16 |
| DS2105S | 9-LINE 110 ohm SCSI BUS TERMINATOR, PDSO16 |
| DS2108S | 9-LINE 330 ohm SCSI BUS TERMINATOR, PDSO24 |
| DS2108 | 9-LINE 330 ohm SCSI BUS TERMINATOR, PDSO24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2016R-100+ | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016R-150 | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016R-150+ | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016S-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:IC-SM-16K CMOS SRAM |
| DS201B10A10 | 制造商:ABB Low Voltage Products and Systems 功能描述:System Pro M RCBO DS201 B10 A10 |
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