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參數(shù)資料
| 型號： | DS2016 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 2K x 8 3V/5V Operation Static RAM(2K x 8 在3V/5V下工作的靜態(tài)RAM) |
| 中文描述： | 2K X 8 STANDARD SRAM, 100 ns, PDIP24 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 94K |
| 代理商： | DS2016 |
DS2016
2K x 8 3V/5V Operation Static RAM
DS2016
022598 1/11
FEATURES
Low power CMOS design
Standby current
– 50 nA max at t
A
= 25
°
C V
CC
= 3.0V
– 100 nA max at t
A
= 25
°
C V
CC
= 5.5V
– 1
μ
A max at t
A
= 60
°
C V
CC
= 5.5V
Full operation for V
CC
= 5.5V to 2.7V
Data Retention Voltage = 5.5V to 2.0V
Fast 5V access time
– DS2016 – 100
– DS2016 – 150
Reduced–speed 3V access time
– DS2016 – 100
– DS2016 – 150
Operating temperature range of –40
°
C to +85
°
C
Full static operation
TTL compatible inputs and outputs over voltage
range of 5.5V to 2.7 volts.
Available in 24–pin DIP and 24–pin SOIC packages
Suitable for both battery operate and battery backup
applications
100 ns
150 ns
250 ns
250 ns
PIN ASSIGNMENT
V
CC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
DS2016 24–PIN DIP (600 MIL)
DS2016S 24–PIN SOIC (330 MIL)
PIN DESCRIPTION
A0 – A10
DQ0 – DQ7
CE
WE
OE
V
CC
– Address Inputs
– Data Input/Output
– Chip Enable Input
– Write Enable Input
– Output Enable Input
– Power Supply Input
2.7V – 5.5V
– Ground
GND
DESCRIPTION
The DS2016 is a 16,384–bit, low–power, fully static ran-
dom access memory organized as 2048 words by
8–bits using CMOS technology. The device operates
from a single power supply with a voltage input between
2.7 and 5.5 volts. The chip enable input (CE) is used for
device selection and can be used in order to achieve the
minimum standby current mode, which facilitates both
battery operate and battery backup applications. The
device provides access times as fast as 100 ns when
operated from a 5 volt power supply input, and also pro-
vides relatively good performance of 250 ns access
while operating from a 3 volt input. The device main-
tains TTL–level inputs and outputs over the input volt-
age range of 2.7 to 5.5 volts. The DS2016 is most suit-
able for low power applications where battery operation
or battery backup for nonvolatility are required. The
DS2016 is a JEDEC–standard 2K x 8 SRAM and is pin-
compatible with ROM and EPROM of similar density.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2016-100 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016-100+ | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016-150 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016R-100 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2016R-100+ | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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