參數(shù)資料
型號: DS18S20-PAR
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: Switch/Digital Output Temperature Sensor
英文描述: DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 0.50Cel, ROUND, THROUGH HOLE MOUNT
封裝: TO-92, 3 PIN
文件頁數(shù): 10/20頁
文件大小: 250K
代理商: DS18S20-PAR
DS18S20-PAR
18 of 20
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground
–0.5V to +6.0V
Operating temperature
–55
°C to +100°C
Storage temperature
–55
°C to +125°C
Soldering temperature
See J-STD-020A Specification
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-55°C to +100°C; VPU=3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS NOTES
Pullup Supply Voltage
VPU
3.0
5.5
V
1,2
Thermometer Error
tERR
-10°C to +85°C
±
°C
3
-55°C to +100°C
±2
Input Logic Low
VIL
-0.3
+0.8
V
1,4,5
Input Logic High
VIH
3.0
5.5
V
1,6
Sink Current
IL
VI/O=0.4V
4.0
mA
1
Active Current
IDQA
1
1.5
mA
7
DQ Input Current
IDQ
5A
8
Drift
±0.2
°C
9
NOTES:
1.
All voltages are referenced to ground.
2.
The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to VPU. In order to meet the VIH spec of the
DS18S20-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: VPU_ACTUAL = VPU_IDEAL + VTRANSISTOR.
3.
See typical performance curve in Figure 15.
4.
Logic low voltages are specified at a sink current of 4 mA.
5.
To always guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have
to be reduced to as low as 0.5V.
6.
Logic high voltages are specified at a source current of 1 mA.
7.
Active current refers to supply current during active temperature conversions or EEPROM writes.
8.
DQ line is high (“hi-Z” state).
9.
Drift data is based on a 1000 hour stress test at 125°C.
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; VPU=3.0V to 5.5V)
PARAMETER
SYMB
OL
CONDITION
MIN
TYP
MAX
UNITS
NV Write Cycle Time
twr
210
ms
EEPROM Writes
NEEWR
-55°C to +55°C
50k
writes
EEPROM Data Retention
tEEDR
-55°C to +55°C
10
years
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