參數(shù)資料
型號: DS1822+T&R
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: Switch/Digital Output Temperature Sensor
英文描述: DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 2Cel, RECTANGULAR, THROUGH HOLE MOUNT
封裝: LEAD FREE, TO92-3
文件頁數(shù): 11/21頁
文件大小: 222K
代理商: DS1822+T&R
DS1822
19 of 21
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.5V to +6.0V
Operating Temperature Range
-55
°C to +125°C
Storage Temperature Range
-55
°C to +125°C
Solder Dip Temperature
See IPC/JEDEC J-STD-020A Specification
Reflow Oven Temperature
+220°C
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-55°C to +125°C; VDD = 3.0V to 5.5V)
PARAMETER
SYMBOL CONDITION MIN
TYP
MAX
UNITS NOTES
Supply Voltage
VDD
Local Power
+3.0
+5.5
V
1
Parasite Power
+3.0
+5.5
Pullup Supply
Voltage
VPU
Local Power
+3.0
VDD
V
1, 2
-10°C to
+85°C
±2
Thermometer Error
tERR
-55°C to
+125°C
±3
°C
3
Input Logic Low
VIL
-0.3
+0.8
V
1, 4, 5
Local Power
+2.2
Input Logic High
VIH
Parasite Power
+3.0
The lower of
5.5
or
VDD + 0.3
V
1, 6
Sink Current
IL
VI/O=0.4V
4.0
mA
1
Standby Current
IDDS
750
1000
nA
7, 8
Active Current
IDD
VDD=5V
1
1.5
mA
9
DQ Input Current
IDQ
5
A
10
Drift
±0.2
°C
11
NOTES:
1.
All voltages are referenced to ground.
2.
The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the
high level of the pullup is equal to VPU. In order to meet the VIH spec of the DS1822, the actual
supply rail for the strong pullup transistor must include margin for the voltage drop across the
transistor when it is turned on; thus: VPU_ACTUAL = VPU_IDEAL + VTRANSISTOR.
3.
See typical performance curve in Figure 17.
4.
Logic low voltages are specified at a sink current of 4mA.
5.
To guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have to be
reduced to as low as 0.5V.
6.
Logic high voltages are specified at a source current of 1mA.
7.
Standby current specified up to +70
°C. Standby current typically is 3μA at +125°C.
8.
To minimize IDDS, DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or VDD -
0.3V
≤ DQ ≤ V
DD.
9.
Active current refers to supply current during active temperature conversions or EEPROM writes.
10. DQ line is high (high-Z state).
11. Drift data is based on a 1000 hour stress test at +125°C with VDD = 5.5V.
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