參數(shù)資料
型號: DS1809Z-100
廠商: Maxim Integrated Products
文件頁數(shù): 5/9頁
文件大小: 0K
描述: IC DALLASTAT 100K 150MIL 8-SOIC
產(chǎn)品培訓模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 100
系列: Dallastat™
接片: 64
電阻(歐姆): 100k
電路數(shù): 1
溫度系數(shù): 標準值 750 ppm/°C
存儲器類型: 非易失
接口: 上/下
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 管件
DS1809
5 of 9
PUSHBUTTON TIMING DIAGRAMS Figure 4
If during any pushbutton activity the STR input is activated, pushbutton operation will be suspended until
the storage of EEPROM has been completed. Once complete, pushbutton inputs, if still active, will
resume from the point of suspension. Command initiated storage operations will require a minimum of
4 ms to complete the storage operation. This 4 ms is measured from the rise of STR input (see Figure 5).
For applications not requiring or using the nonvolatile memory feature of the DS1809, it is recommended
that the STR input be connected to GND.
COMMAND INITIATED WIPER STORAGE - Figure 5
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