參數(shù)資料
型號: DS1809Z-050+
廠商: Maxim Integrated Products
文件頁數(shù): 5/9頁
文件大?。?/td> 0K
描述: IC DALLASTAT 50K 8-SOIC
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 100
系列: Dallastat™
接片: 64
電阻(歐姆): 50k
電路數(shù): 1
溫度系數(shù): 標(biāo)準(zhǔn)值 750 ppm/°C
存儲器類型: 非易失
接口: 上/下
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 管件
產(chǎn)品目錄頁面: 1430 (CN2011-ZH PDF)
DS1809
5 of 9
PUSHBUTTON TIMING DIAGRAMS Figure 4
If during any pushbutton activity the STR input is activated, pushbutton operation will be suspended until
the storage of EEPROM has been completed. Once complete, pushbutton inputs, if still active, will
resume from the point of suspension. Command initiated storage operations will require a minimum of
4 ms to complete the storage operation. This 4 ms is measured from the rise of STR input (see Figure 5).
For applications not requiring or using the nonvolatile memory feature of the DS1809, it is recommended
that the STR input be connected to GND.
COMMAND INITIATED WIPER STORAGE - Figure 5
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