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參數(shù)資料
| 型號(hào)： | DS1689S-TRL |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 27/36頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC RTC SER W/NV RAM CTRL 28-SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 類型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | NVSRAM |
| 存儲(chǔ)容量： | 114B |
| 時(shí)間格式： | HH:MM:SS（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 2.7 V ~ 3.3 V，4.5 V ~ 5.5 V |
| 電壓 - 電源，電池： | 2.5 V ~ 3.7 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 28-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 28-SOIC |
| 包裝： | 管件 |
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DS1689/DS1693
33 of 36
NOTES:
1) All voltages are referenced to ground.
2) Typical values are at +25
°C and nominal supplies.
3) Outputs are open.
4) Value for voltage and currents is from the VCCI input pin to the VCCO pin.
5) Write protection trip point occurs during power fail prior to switchover from VCC to VBAT.
6) Value for voltage and currents is from the VBAT input pin to the VCCO pin.
7) Applies to the AD0–AD7 pins, and the SQW pin when each is in a high impedance state.
8) The
IRQ pin is open drain.
9) Measured with a load of 50pF + 1 TTL gate.
10) Wake-up/kickstart timeout generated only when the oscillator is enabled and the countdown chain is
not reset.
11) VSW is determined by the larger of VBAT and VBAUX.
12) ZCE is an average input to output impedance as the input is swept from GND to VCCI and less than
4mA is forced through ZCE.
13) The DS1693 keeps time to an accuracy of
±1 minute per month during data retention time for the
period of tDR.
14) tDR is the amount of time that the internal battery can power the internal oscillator and internal
registers of the DS1693. As such, tDR is specified with VCCO floating. If VCCO is powering an external
SRAM, an auxiliary battery must be connected to the VBAUX pin. The auxiliary battery should be sized
such that it can power the external SRAM for the tDR period.
15) The
CEI pin has an internal pullup of 60k
.
16) The PSEL pin has an internal pulldown of 60k
.
17) For industrial grade parts, IBAT (with OSC off) limit increases to 250nA.
18) Real-time clock modules can be successfully processed through conventional wave-soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85
°C. Post solder cleaning with water washing techniques is acceptable, provided that
ultrasonic vibration is not used.
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