參數(shù)資料
型號(hào)： DS1683S+
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 15/21頁(yè)
文件大?。?/td> 0K
描述： IC REAL TIME EVENT REC 8-SOIC
標(biāo)準(zhǔn)包裝： 100
類型： 耗用時(shí)間計(jì)數(shù)器
特點(diǎn)： 警報(bào)器，EEPROM
存儲(chǔ)容量： 16B
時(shí)間格式： 二進(jìn)制
數(shù)據(jù)格式： 二進(jìn)制
接口： I²C，2 線串口
電源電壓： 2.5 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOICN
包裝： 管件
DS1683
Total-Elapsed-Time and Event Recorder with Alarm
3
Maxim Integrated
Note 1: All voltages are referenced to ground. Currents entering the IC are specified as positive; currents exiting the IC are specified
as negative.
Note 2: Guaranteed by design.
Note 3: CB: Total capacitance of one bus line in pF.
Note 4: EEPROM write time begins after a STOP condition occurs.
Note 5: A decoupling capacitor to supply high instantaneous currents during EEPROM writes is recommended. A typical value is
0.01FF. VCC must be maintained above VCC(MIN), including transients, during EEPROM writes.
Note 6: VCC must be at or above 2.5V for tW after the end of an event to ensure data transfer to the EEPROM.
Note 7: Memory locations to which this specification applies: User Memory, ETC Alarm Limit, Event Counter Alarm Limit,
Configuration, Password Value.
Note 8: Memory locations to which this specification applies: Event Counter register, ETC register.
I2C AC ELECTRICAL CHARACTERISTICS
(VCC = 2.5V to 5.5V, TA = -40NC to +85NC, timing referenced to VIL(MAX) and VIH(MIN), unless otherwise noted.) (Figure 7)
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = 2.5V to 5.5V, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SCL Clock Frequency
fSCL
400
kHz
Bus Free Time Between STOP
and START Conditions
tBUF
1.3
F
s
Hold Time (Repeated) START
Condition
tHD:STA
0.6
F
s
Low Period of SCL
tLOW
1.3
F
s
High Period of SCL
tHIGH
0.6
F
s
Data Hold Time
tHD:DAT
0
0.9
F
s
Data Setup Time
tSU:DAT
100
ns
START Setup Time
tSU:STA
0.6
F
s
SDA and SCL Rise Time
tR
(Note 3)
20 +
0.1CB
300
ns
SDA and SCL Fall Time
tF
(Note 3)
20 +
0.1CB
300
ns
STOP Setup Time
tSU:STO
0.6
F
s
SDA and SCL Capacitive
Loading
CB
(Note 3)
400
pF
EEPROM Write Time
tW
(Notes 4, 5, 6)
10
20
ms
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
EEPROM Write Cycles
TA = +70NC (Note 7)
50,000
Writes
EEPROM Write Cycles (4 Banks)
TA = +70NC (Note 8)
200,000
Writes
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