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參數(shù)資料
| 型號： | DS1609 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | Dual Port RAM(雙端口RAM) |
| 中文描述： | 256 X 8 DUAL-PORT SRAM, 50 ns, PDIP24 |
| 封裝： | 0.600 INCH, PLASTIC, DIP-24 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | DS1609 |
DS1609
Dual Port RAM
DS1609
021998 1/7
FEATURES
Totally asynchronous 256 byte dual port memory
Multiplexed address and data bus keeps pin count
low
Dual port memory cell allows random access with
minimum arbitration
Each port has standard independent RAM control sig-
nals
Fast access time
Low power CMOS design
24–pin DIP or 24–pin SOIC surface mount package
Both CMOS and TTL compatible
Reduced performance operation down to 2.5 volts
Operating temperature of -40
°
C to +85
°
C
Standby current of 100 nA @ 25
°
C makes the device
ideal for battery backup or battery operate applica-
tions.
PIN ASSIGNMENT
24–PIDS1609S
See MSection
V
CC
OE
B
CE
B
WE
B
AD0
B
AD1
B
AD2
B
AD3
B
AD4
B
AD5
B
B
B
AD7
A
AD6
A
AD5
A
AD4
A
AD3
A
AD2
A
AD1
A
AD0
A
WE
A
CE
A
OE
A
GND
PORT A
PAD7
24–PIDS1609
See MSection
PORT A
PORT B
V
CC
OE
B
CE
B
WE
B
AD0
B
AD1
B
AD2
B
AD3
B
AD4
B
AD5
B
AD6
B
AD7
B
AD7
A
AD6
A
AD5
A
AD4
A
AD3
A
AD2
A
AD1
A
AD0
A
WE
A
CE
A
OE
A
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PIN DESCRIPTION
AD0-AD7
CE
WE
OE
V
CC
GND
– Port address/data
– Port enable
– Write enable
– Output enable
– +5 volt supply
– Ground
DESCRIPTION
The DS1609 is a random access 256 byte dual port
memory designed to connect two asyncronous ad-
dress/data buses together with a common memory ele-
ment. Both ports have unrestricted access to all 256 by-
tes of memory and with modest system discipline no
arbitration is required. Each port is controlled by three
control signals: output enable, write enable, and port en-
able. The device is packaged in plastic 24–pin DIP and
24–pin SOIC. Output enable access time of 50 ns is
available when operating at 5 volts. Reduced perform-
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