參數資料
型號: DS1511W
英文描述: Y2K-Compliant Watchdog Real-Time Clocks
中文描述: 千年蟲的看門狗實時時鐘
文件頁數: 18/20頁
文件大?。?/td> 265K
代理商: DS1511W
DS1501/DS1511 Y2K Watchdog Real-Time Clock
18 of 20
If V
CC
is applied within the timeout period, the system power-on sequence continues, as shown in Intervals 2 to 5 in
the timing diagram. During Interval 2,
PWR
remains active, and
IRQ
is driven to its active-low level, indicating that
either TDF or KSF was set in initiating the power-on. In the diagram,
KS
is assumed to be pulled up to the V
BAUX
supply. Also at this time, the PAB bit is automatically cleared to 0 in response to a successful power-on. The
PWR
line remains active as long as the PAB remains cleared to 0.
At the beginning of Interval 3, the system processor has begun code execution and clears the interrupt condition of
TDF and/or KSF by reading the flags register or by writing TDF and KSF to 0. As long as no other interrupt within
the DS1501/DS1511 is pending, the
IRQ
line is taken inactive once these bits are reset, and execution of the
application software can proceed. During this time, the wakeup and kickstart functions can be used to generate
status and interrupts. TDF is set in response to a day/date, hours, minutes, and seconds match condition. KSF is
set in response to a low-going transition on
KS
. If the associated interrupt-enable bit is set (TDE and/or KIE), then
the
IRQ
line is driven low in response to enabled event. In addition, the other possible interrupt sources within the
DS1501/DS1511 can cause
IRQ
to be driven low. While system power is applied, the on-chip logic always attempts
to drive the
PWR
pin active in response to the enabled kickstart or wakeup condition. This is true even if
PWR
was
previously inactive as the result of power being applied by some means other than wakeup or kickstart.
The system can be powered down under software control by setting the PAB bit to 1. The PAB bit can only be set
to 1 after the TDF and KSF flags have been cleared to 0. Setting PAB to 1 causes the open-drain
PWR
pin to be
placed in a high-impedance state, as shown at the beginning of Interval 4 in the timing diagram. As V
CC
voltage
decays, the
IRQ
output pin is placed in a high-impedance state when V
CC
goes below V
PF
. If the system is to be
again powered on in response to a wakeup or kickstart, then both the TDF and KSF flags should be cleared, and
TPE and/or KIE should be enabled prior to setting the PAB bit.
During Interval 5, the system is fully powered down. Battery backup of the clock calendar and NV RAM is in effect
and
IRQ
is tri-stated, and monitoring of wakeup and kickstart takes place. If PRS = 1,
PWR
stays active; otherwise,
if PRS = 0,
PWR
is tri-stated.
SQUARE-WAVE OUTPUT
The square-wave output is enabled and disabled through the
E32K
bit. If the square wave is enabled (
E32K
= 0)
and the oscillator is running, then a 32.768kHz square wave is output on the SQW pin. If the battery-backup
32kHz-enable bit (BB32) is enabled, and voltage is applied to V
BAUX
, then the 32.768kHz square wave is output on
the SQW pin in the absence of V
CC
.
BATTERY MONITOR
The DS1501/DS1511 constantly monitor the battery voltage of the backup-battery sources (V
BAT
and V
BAUX
). The
battery low flags BLF1 and BLF2 are set to 1 if the battery voltages on V
BAT
and V
BAUX
are less than V
BLF
(typical);
otherwise, BLF1 and BLF2 are 0. BLF1 monitors V
BAT
and BLF2 monitors V
BAUX
.
256 x 8 EXTENDED RAM
Two on-chip latch registers control access to the SRAM. One register is used to hold the SRAM address; the other
is used to hold read/write data. The SRAM address space is from 00h to FFh. The 8-bit address of the RAM
location to be accessed must be loaded into the extended RAM address register located at 10h. Data in the
addressed location can be read by performing a read operation from location 13h, or written to by performing a
write operation to location 13h. Data in any addressed location can be read or written repeatedly with changing the
address in location 10h.
To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment the
extended RAM address. To enable the burst mode feature, set the BME bit to 1. With burst mode enabled, write
the extended RAM starting address location to register 10h. Then read or write the extended RAM data from/to
register 13h. The extended RAM address locations are automatically incremented on the rising edge of
OE
,
CE,
or
WE
only when register 13h is being accessed (Figure 4). The address pointer wraps around after the last address
is accessed.
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