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參數(shù)資料
| 型號： | DS1501WS |
| 英文描述： | Real-Time Clock |
| 中文描述： | 實(shí)時(shí)時(shí)鐘 |
| 文件頁數(shù)： | 16/30頁 |
| 文件大小： | 291K |
| 代理商： | DS1501WS |
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DS1501/DS1511
16 of 30
SQUARE WAVE OUTPUT
The square wave output is enabled and disabled via the
E32K
bit. If the square wave is enabled
(
E32K
="0") and the oscillator is running, then a 32.768 kHz square wave will be output on the SQW pin.
If the Battery Backup 32 kHz enable bit (BB32) is enabled, and voltage is applied to V
BAUX
, then the
32.768 kHz square wave will be output on the SQW pin in the absence of V
CC
.
BATTERY MONITOR
The DS1501/DS1511 constantly monitors the battery voltage of the back-up battery sources (V
BAT
and
V
BAUX
). The Battery Low Flags BLF1 and BLF2 will be set to a "1" if the battery voltage on V
BAT
and
V
BAUX
are less than 2.5 volts (typical), otherwise BLF1 and BLF2 will be a "0". BLF1 monitors V
BAT
,
and BLF2 monitors V
BAUX
.
POWER-UP DEFAULT STATES
These bits are set upon power-up:
EOSC
="0",
E32K
="0", TIE="0", KIE="0", WDE="0", and WDS="0".
256 X 8 EXTENDED RAM
The DS1501/DS1511 provides 256 x 8 of on-chip SRAM which is controlled as nonvolatile storage
sustained from a lithium battery. On power-up, the RAM is taken out of write protect status by an internal
signal.
Access to the SRAM is controlled by two on-chip latch registers. One register is used to hold the SRAM
address, and the other is used to hold read/write data. The SRAM address space is from 00h to FFh. The
8-bit address of the RAM location to be accessed must be loaded into the extended RAM address register
located at 10h. Data in the addressed location may be read by performing a read operation from location
13h, or written to by performing a write operation to location 13h. Data in any addressed location may be
read or written repeatedly with changing the address in location 10h.
To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment
the extended RAM address. To enable the burst mode feature, set the BME bit to a 1. With burst mode
enabled, write the extended RAM starting address location to register 10h. Then read or write the
extended RAM data from/to register 13h. The extended RAM address locations are automatically
incremented on the rising edge of
OE
,
WE
,
or
CS
only when register 13h is being accessed. Refer to the
Burst Mode Timing Waveform (Figure 7).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1501Y | Real-Time Clock |
| DS1501YE | Real-Time Clock |
| DS1501YS | Real-Time Clock |
| DS1501 | Y2K-Compliant Watchdog Real-Time Clocks |
| DS1511 | Y2K-Compliant Watchdog Real-Time Clocks |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1501WS/T&R | 制造商:Maxim Integrated Products 功能描述:IC RTC WDOG Y2KC 3.3V 28-SOIC |
| DS1501WS/T&R | 功能描述:實(shí)時(shí)時(shí)鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1501WS+ | 功能描述:實(shí)時(shí)時(shí)鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1501WS+T&R | 制造商:Maxim Integrated Products 功能描述:IC RTC WDOG Y2KC 3.3V 28-SOIC |
| DS1501WS+T&R | 功能描述:實(shí)時(shí)時(shí)鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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