參數(shù)資料
型號(hào)： DS1330YP-70
廠商： MAXIM INTEGRATED PRODUCTS INC
元件分類： Static RAM
英文描述： 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
封裝： POWERCAP MODULE-34
文件頁(yè)數(shù)： 5/11頁(yè)
文件大?。?/td> 228K
代理商： DS1330YP-70
DS1330Y/AB
3 of 11
PACKAGES
The 34-pin PowerCap module integrates SRAM memory and NV control along with contacts for
connection to the lithium battery in the DS9034PC PowerCap. The PowerCap module package design
allows a DS1330 PCM device to be surface mounted without subjecting its lithium backup battery to
destructive high-temperature reflow soldering. After a DS1330 PCM is reflow soldered, a DS9034PC is
snapped on top of the PCM to form a complete NV SRAM module. The DS9034PC is keyed to prevent
improper attachment. DS1330 PowerCap modules and DS9034PC PowerCaps are ordered separately and
shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +6.0V
Operating Temperature Range
0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature Range
-40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature
See IPC/JEDEC J-STD-020
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
DS1330AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1330Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
0.8
V
DC ELECTRICAL
(VCC = 5V
± 5% for DS1330AB)
CHARACTERISTICS
(tA: See Note 10) (VCC = 5V
± 10% for DS1330Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Leakage Current
IIL
-1.0
+1.0
mA
I/O Leakage Current CE
VIH VCC
IIO
-1.0
+1.0
mA
Output Current @ 2.4V
IOH
-1.0
mA
14
Output Current @ 0.4V
IOL
2.0
mA
14
Standby Current CE =2.2V
ICCS1
200
600
mA
Standby Current CE =VCC-0.5V
ICCS2
50
150
mA
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1330AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1330Y)
VTP
4.25
4.37
4.5
V
相關(guān)PDF資料
PDF描述
DS1345ABP-70 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1345WP-150 128K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
DS1345YP-100 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
DS1345ABP-100 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
DS1345YP-70 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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DS1330YP-70IND 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330YP-70-IND 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor
DS1330YP-70IND+ 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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