參數(shù)資料
型號(hào): DS1330ABP-100
廠商: DALLAS SEMICONDUCTOR
元件分類: Static RAM
英文描述: 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
封裝: POWERCAP MODULE-34
文件頁數(shù): 5/11頁
文件大?。?/td> 218K
代理商: DS1330ABP-100
DS1330Y/AB
3 of 11
FRESHNESS SEAL
Each DS1330 is shipped from Dallas Semiconductor with its lithium energy source disconnected,
guaranteeing full energy capacity. When VCC is first applied at a level greater than VTP, the lithium
energy source is enabled for battery backup operation.
PACKAGES
The 34–pin PowerCap Module integrates SRAM memory and nonvolatile control along with contacts for
connection to the lithium battery in the DS9034PC PowerCap. The PowerCap Module package design
allows a DS1330 PCM device to be surface mounted without subjecting its lithium backup battery to
destructive high–temperature reflow soldering. After a DS1330 PCM is reflow soldered, a DS9034PC is
snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to
prevent improper attachment. DS1330 PowerCap Modules and DS9034PC PowerCaps are ordered
separately and shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1330AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1330Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
0.8
V
DC ELECTRICAL
(VCC=5V
±=5% for DS1330AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V
±=10% for DS1330Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
A
I/O Leakage Current CE
≥ V
IH
≤ V
CC
IIO
-1.0
+1.0
A
Output Current @ 2.2V
IOH
-1.0
mA
14
Output Current @ 0.4V
IOL
2.0
mA
14
Standby Current CE =2.2V
ICCS1
200
600
A
Standby Current CE =VCC-0.5V
ICCS2
50
150
A
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1330AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1330Y)
VTP
4.25
4.37
4.5
V
相關(guān)PDF資料
PDF描述
DS1330YP-100 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
DS1330ABP-70 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1330WP-150 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
DS1330YP-70 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1345ABP-70 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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DS1330ABP-100-IND 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor
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DS1330ABP-70IND 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube