- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄19920 > DS1314S-2/T&R (Maxim Integrated)IC CTRLR NV W/BATT MON 3V 8-SOIC PDF資料下載
參數(shù)資料
| 型號： | DS1314S-2/T&R |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CTRLR NV W/BATT MON 3V 8-SOIC |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 2,500 |
| 控制器類型： | 非易失性 RAM |
| 電源電壓： | 3 V ~ 3.6 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 帶卷 (TR) |
DS1314
10 of 12
NOTES:
2. All voltages referenced to ground.
3. Measured with outputs open circuited.
4. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥
VCCI -0.2V.
5. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥
VCCI -0.3V.
6. All inputs within 0.3V of ground or VCCI.
7. ICCO2 is the maximum average load current which the DS1314 can supply to the memories in the
battery-backup mode.
8. Measured with a load as shown in Figure 2.
9. Chip Enable Output ( CEO ) can only sustain leakage current in the battery-backup mode.
10. CEO will be held high for a time equal to tREC after VCCI crosses VCCTP on power-up.
11. BW and RST are open drain outputs and as such cannot source current. External pull-up resistors
should be connected to these pins for proper operation. Both BW and RST can sink 10 mA.
12. tCE maximum must be met to ensure data integrity on power-down.
13. In battery-backup mode, inputs must never be below ground or above VCCO.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: See below
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
OUTPUT LOAD Figure 2
* INCLUDING SCOPE AND JIG CAPACITANCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RMA32DTAS | CONN EDGECARD 64POS R/A .125 SLD |
| EEM10DTMT-S189 | CONN EDGECARD 20POS R/A .156 SLD |
| VE-J3Z-CX-B1 | CONVERTER MOD DC/DC 2V 30W |
| NCV8674DS50G | IC REG LDO 5V .35A D2PAK-3 |
| DS1216C | IC SMART/RAM 5V 64K/256K 28-DIP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1315 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Phantom Time Chip |
| DS1315_07 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Phantom Time Chip |
| DS1315-33 | 功能描述:實時時鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1315-33+ | 功能描述:實時時鐘 Phantom Time Chip RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1315-3V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Real-Time Clock |
發(fā)布緊急采購，3分鐘左右您將得到回復。