參數(shù)資料
型號: DS1250WP-150
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: Static RAM
英文描述: 512K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
封裝: POWERCAP MODULE-34
文件頁數(shù): 5/11頁
文件大?。?/td> 234K
代理商: DS1250WP-150
DS1250W
3 of 11
memory and nonvolatile control into a module base along with contacts for connection to the lithium
battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1250W PCM
device to be surface mounted without subjecting its lithium backup battery to destructive high-
temperature reflow soldering. After a DS1250W module base is reflow soldered, a DS9034PC PowerCap
is snapped on top of the base to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to
prevent improper attachment. DS1250W module bases and DS9034PC PowerCaps are ordered separately
and shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +4.6V
Operating Temperature
0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature
DIP Module
+260°C for 10 seconds
Caution: Do Not Reflow
(Wave or Hand Solder Only)
PowerCap Module
See IPC/JEDEC J-STD-020
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Power Supply Voltage
VCC
3.0
3.3
3.6
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.4
V
DC ELECTRICAL CHARACTERISTICS
(tA: See Note 10) (VCC=3.3V ± 0.3V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
μA
I/O Leakage Current CE
≥ V
IH ≤ VCC
IIO
-1.0
+1.0
μA
Output Current @ 2.2V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
50
250
μA
Standby Current CE =VCC-0.2V
ICCS2
30
150
μA
Operating Current
ICCO1
50
mA
Write Protection Voltage
VTP
2.8
2.9
3.0
V
CAPACITANCE
(tA=25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
5
10
pF
Input/Output Capacitance
CI/O
5
10
pF
相關PDF資料
PDF描述
DS1250Y-70 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32
DS1250YP-100 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
DS1250YP-70 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1250ABP-100 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
DS1250AB-70 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32
相關代理商/技術參數(shù)
參數(shù)描述
DS1250WP-150+ 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1250WP-150-C01 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1250WP-150-IND 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 4096k Nonvolatile SRAM
DS1250Y 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM
DS1250Y/AB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4096K Nonvolatile SRAM