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參數(shù)資料
| 型號： | DS1244P |
| 英文描述： | 256k NV SRAM with Phantom Clock |
| 中文描述： | 256k NV SRAM，帶有隱含時鐘 |
| 文件頁數(shù)： | 17/19頁 |
| 文件大?。?/td> | 288K |
| 代理商： | DS1244P |
DS1244/DS1244P
17 of 19
AC TEST CONDITIONS
Output Load:
Input Pulse Levels:
50pF + 1TTL Gate
0 to 3V
Timing Measurement Reference Levels
Input:
1.5V
Output:
1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1)
WE is high for a read cycle.
2)
OE = V
IH
or V
IL
. If OE = V
IH
during write cycle, the output buffers remain in a high-impedance
state.
3)
t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4)
t
DH
, t
DS
are measured from the earlier of CE or WE going high.
5)
These parameters are sampled with a 50pF load and are not 100% tested.
6)
If the CE low transition occurs simultaneously with or later than the WE low transition in Write
Cycle 1, the output buffers remain in a high-impedance state during this period.
7)
If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8)
If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9)
The expected t
DR
is defined as cumulative time in the absence of V
CC
with the clock oscillator
running.
10)
t
WR
is a function of the latter occurring edge of WE or CE.
11)
Voltages are referencd to ground.
12)
RST (Pin 1) has an internal pullup resistor.
13)
RTC modules can be successfully processed through conventional wave-soldering techniques as long
as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post-
solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not
used.
In addition, for the PowerCap:
1)
Dallas Semiconductor recommends that PowerCap module bases experience one pass through solder
reflow oriented with the label side up (“l(fā)ive-bug”).
2)
Hand soldering and touch-up: Do not touch or apply the soldering iron to leads for more than three
seconds.
–
To solder, apply flux to the pad, heat the lead frame pad, and apply solder. To remove the part,
apply flux, heat the lead frame pad until the solder reflows, and use a solder wick to remove
solder.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1244W-120 | 功能描述:實時時鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1244W-120+ | 功能描述:實時時鐘 256k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1244W-120IND | 功能描述:IC NVSRAM 256KBIT 120NS 28DIP RoHS:否 類別:集成電路 (IC) >> 時鐘/計時 - 實時時鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標準包裝:1 系列:- 類型:時鐘/日歷 特點:警報器，閏年，SRAM 存儲容量:- 時間格式:HH:MM:SS（12/24 小時） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS1244W-120IND+ | 功能描述:實時時鐘 256k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1244WP-120 | 功能描述:實時時鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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