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參數資料
| 型號： | DS1230YP-150-IND |
| 英文描述： | Isolation Transformer |
| 中文描述： | 256k非易失SRAM |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 214K |
| 代理商： | DS1230YP-150-IND |
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111899
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 150 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Optional industrial temperature range of
-40
°
C to +85
°
C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A14
DQ0 - DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
- No Connect
DS1230W
3.3V 256k Nonvolatile SRAM
www.dalsemi.com
13
14
1
2
3
4
5
6
7
8
9
10
11
12
27
26
25
24
23
22
21
20
19
18
17
16
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
V
CC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
28
15
A12
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
NC
NC
NC
NC
V
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34
NC
GND
V
BAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關PDF資料 |
PDF描述 |
|---|---|
| DS1230YP-200-IND | Isolation Transformer |
| DS1230YP-70-IND | 256k Nonvolatile SRAM |
| DS1230YP-85-IND | 256k Nonvolatile SRAM |
| DS1230Y-85 | 256k Nonvolatile SRAM |
| DS1230AB | 256k Nonvolatile SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1230Y-P200 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230YP-200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230Y-P200IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230YP-200-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230Y-P70 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
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