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參數(shù)資料
| 型號(hào)： | DS1225AD-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP28 |
| 封裝： | 0.720 INCH, EXTENDED, DIP-28 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 147K |
| 代理商： | DS1225AD-70 |
DS1225AB/AD
8 of 10
NOTES:
1.
WE is high for a read cycle.
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance
state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. tDS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1225AB and each DS1225AD has a built-in switch that disconnects the lithium source until
VCC is first applied by the user. The expected tDR is defined as accumulative time in the absence of
VCC starting from the time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power down condition the voltage on any pin may not exceed the voltage on VCC .
12. tWR1 , tDH1 are measured from WE going high.
13. tWR2 , tDH2 are measured from CE going high.
14. DS1225AB and DS1225AD modules are recognized by Underwriters Laboratory (U.L.
) under file
E99151.
DC TEST CONDITIONS
Outputs Open
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1225AB-200 | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| DS1225Y-170 | 8K X 8 NON-VOLATILE SRAM MODULE, 170 ns, PDIP28 |
| DS1225Y-150 | 8K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP28 |
| DS1225Y | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| DS1230AB | 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1225AD-70+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AD70IND | 制造商:UNBRANDED 功能描述:ELECTRONIC PARTS DM54LS283W THROUGH*NIC* |
| DS1225AD-70IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AD-70-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1225AD-70IND+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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