參數(shù)資料
型號(hào)： DS1220Y-120
廠商： MAXIM INTEGRATED PRODUCTS INC
元件分類： Static RAM
英文描述： 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24
封裝： 0.720 INCH,DIP-24
文件頁數(shù)： 3/9頁
文件大?。?/td> 390K
代理商： DS1220Y-120
NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
3 of 9
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0
°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature
-40
°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature
+260°C for 10 seconds
Caution: Do Not Reflow
(Wave or Hand Solder Only)
This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA : See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Power Supply Voltage
VCC
4.5
5.0
5.5
V
Input Logic 1
VIH
2.2
VCC
V
Input Logic 0
VIL
0.0
+0.8
V
DC ELECTRICAL CHARACTERISTICS
(TA : See Note 10; VCC = 5V ± 10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
μA
I/O Leakage Current
CE
≥ VIH ≤ VCC
IIO
-1.0
+1.0
μA
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
3.0
7.0
mA
Standby Current CE =VCC -0.5V
ICCS2
2.0
4.0
mA
Operating Current tCYC= 200ns
(Commercial)
ICCO1
75
mA
Operating Current tCYC=200ns
(Industrial)
ICCO1
85
mA
Write Protection Voltage
VTP
4.25
V
CAPACITANCE
(T A = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
5
10
pF
Input/Output Capacitance
CI/O
5
12
pF
相關(guān)PDF資料
PDF描述
DS1220Y-100 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA24
DS1220Y-200 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
DS1220Y-150 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
DS1220Y 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
DS1222S SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1220Y-120+ 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube
DS1220Y-120-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
DS1220Y-150 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1220Y-150+ 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1220Y-150-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
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