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參數(shù)資料
| 型號(hào)： | DS1220Y-100 |
| 英文描述： | 16k Nonvolatile SRAM |
| 中文描述： | 16K的非易失SRAM |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 164K |
| 代理商： | DS1220Y-100 |
DS1220Y
7 of 8
7.
If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.
8.
If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9.
Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected t
DR
is defined as starting at the date of
manufacture.
10.
All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11.
In a power-down condition the voltage on any pin may not exceed the voltage of V
CC
.
12.
t
WR1
, t
DH1
are measured from WE going high.
13.
t
WR2
, t
DH2
are measured from CE going high.
14.
DS1220Y modules are recognized by Underwriters Laboratory (U.L.
) under file E99151 (R).
DC TEST CONDITIONS
Outputs open.
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input:1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220Y-120 | 16k Nonvolatile SRAM |
| DS1220Y-150 | 16k Nonvolatile SRAM |
| DS1220Y-200 | 16k Nonvolatile SRAM |
| DS1220 | 16k Nonvolatile SRAM |
| DS1220AB-100-IND | M39012 MIL RF CONNECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220Y-100+ | 制造商:Maxim Integrated Products 功能描述:NVRAM NVSRAM PARALLEL 16KBIT 5V - Rail/Tube |
| DS1220Y-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-120+ | 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube |
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