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參數(shù)資料
| 型號： | DS1220AD-120 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
| 封裝： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大小： | 158K |
| 代理商： | DS1220AD-120 |
DS1220AB/AD
7 of 10
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
(TA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
VCC Fail Detect to CE and WE Inactive
tPD
1.5
μs
11
VCC slew from VTP to 0V
tF
300
μs
VCC slew from 0V to VTP
tR
300
μs
VCC Valid to CE and WE Inactive
tPU
2
ms
VCC Valid to End of Write Protection
tREC
125
ms
(TA =25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in the
battery backup mode.
NOTES:
1.
WE
is high for a read cycle.
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or CE
going low to the earlier of CE or WE going high.
4. tDS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
相關PDF資料 |
PDF描述 |
|---|---|
| DS1220AD-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA24 |
| DS1220AB-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220AB | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AD-120+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-120-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD150 | 制造商:DALLAS 功能描述:* |
| DS1220AD-150 | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-150+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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