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參數(shù)資料
| 型號(hào)： | DS1220AB |
| 英文描述： | 16k Nonvolatile SRAM |
| 中文描述： | 16k非易失SRAM |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | DS1220AB |
DS1220AB/AD
8 of 9
7.
If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8.
If WE is low or the WElow transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9.
Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until
V
CC
is first applied by the user. The expected t
DR
is defined as accumulative time in the absence of
V
CC
starting from the time power is first applied by the user.
10.
All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11.
In a power down condition the voltage on any pin may not exceed the voltage on V
CC
.
12.
t
WR1
, t
DH1
are measured from WE going high.
13.
t
WR2
, t
DH2
are measured from CEgoing high.
14.
DS1220AB and DS1220AD modules are recognized by Underwriters Laboratory (U.L.
) under file
E99151.
DC TEST CONDITIONS
Outputs Open
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220AB-170 | 64k Nonvolatile SRAM |
| DS1220AB-200 | 64k Nonvolatile SRAM |
| DS1220AB-200-IND | 16k Nonvolatile SRAM |
| DS1220AB-85 | 64k Nonvolatile SRAM |
| DS1220AD | 16k Nonvolatile SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AB/AD | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16k Nonvolatile SRAM |
| DS1220AB_10 | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AB-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AB-100+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AB-100IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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