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參數(shù)資料
| 型號(hào)： | DS1220AB-150 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| 封裝： | 0.720 INCH, EXTENDED, DIP-24 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 136K |
| 代理商： | DS1220AB-150 |
DS1220AB/AD
7 of 9
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
CE at VIH before Power-Down
tPD
0
s
11
VCC slew from VTP to 0v
tF
300
s
VCC slew from 0V to VTP
tR
300
s
CE at VIH after Power-Up
tREC
2
125
ms
(TA =25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in the
battery backup mode.
NOTES:
1.
WE is high for a read cycle.
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or CE
going low to the earlier of CE or WE going high.
4. tDS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high-impedance state during this period.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220AB-100 | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDIP24 |
| DS1220AB-120 | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 |
| DS1220AD-100 | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDIP24 |
| DS1220AD-120 | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
| DS1220AD-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AB150+ | 制造商:Maxim Integrated Products 功能描述:Nonvolatile RAM,DS1220AB150 2kx8bit 16kb |
| DS1220AB-150+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AB-150IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AB-150-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AB-150IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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