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參數(shù)資料
| 型號(hào)： | DS1217M3-25 |
| 英文描述： | Nonvolatile Read/Write Cartridge |
| 中文描述： | 非易失讀/寫(xiě)墨盒 |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | DS1217M3-25 |
DS1217M
030598 8/8
NOTES:
1. WE is high for a read cycle.
2. OE = V
IH
or V
IL
. If OE = V
IH
during a write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to
the earlier of CE of WE going high.
4. t
DH
, t
DS
are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the
output buffers remain in a high impedance state in this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the
output buffers remain in a high impedance state in this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output
buffers remain in a high impedance state in this period.
9. Each DS1217M is marked with a 4-digit date code AABB. AA designates the year of manufacture. BB desig-
nates the week of manufacture. The expected t
DR
is defined as starting at the date of manufacture.
10.Removing and installing the cartridge with power applied may disturb data.
DC TEST CONDITIONS
Outputs Open
t Cycle = 250 ns
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
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