參數(shù)資料
型號: DS1210
英文描述: Nonvolatile Controller Chip
中文描述: 非易失控制器芯片
文件頁數(shù): 5/6頁
文件大?。?/td> 69K
代理商: DS1210
DS1210
5 of 6
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
(T
A
= 25°C)
UNITS
pF
pF
SYMBOL
C
IN
C
OUT
MIN
TYP
MAX
5
7
NOTES
(0°C to 70°C; V
CCI
= 4.75V to 5.5V, PIN 3 = GND)
(V
CCI
= 4.75V to 5.5V, PIN 3 = GND)
SYMBOL
MIN
TYP
t
PD
5
10
t
PF
AC ELECTRICAL CHARACTERISTICS
PARAMETER
CE
Propagation Delay
CE
High to Power-Fail
MAX
20
0
UNITS
ns
ns
NOTES
5
(0°C to 70°C; V
CCI
= 4.75V, PIN 3 = GND; V
CCI
< 4.5, PIN 3 = V
CCO
)
Recovery at Power Up
t
REC
V
CC
Slew Rate Power-Down
t
F
300
V
CC
Slew Rate Power-Down
t
FB
V
CC
Slew Rate Power-Down
t
R
CE
Pulse Width
t
CE
2
80
125
ms
μs
μs
μs
μs
10
0
1.5
8
NOTES:
1.
All voltages are referenced to ground.
2.
Only one battery input is required. Unused battery inputs must be grounded.
3.
Measured with V
CCO
and
CEO
open.
4.
I
CC01
is the maximum average load which the DS1210 can supply to the memories.
5.
Measured with a load as shown in Figure 2.
6.
I
CC02
is the maximum average load current which the DS1210 can supply to the memories in the
battery backup mode.
7.
t
CE
max. must be met to ensure data integrity on power loss.
8.
CEO
can only sustain leakage current in the battery backup mode.
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